Samsung reportedly plans 2nm fab to boost HBM base-die output

T2Covered by 1 source · first reported by JP/KR/TW: Korea Herald / Taipei Times / DigiTimes at 05 Nov, 02:55 UTC

Samsung Electronics is preparing to build a 2nm- and 4nm-class foundry fab at its Giheung campus in Yongin, South Korea, to expand production of logic base dies used in high-bandwidth memory (HBM). The fab is estimated to cost KRW25 trillion (approx. US$18.6 billion), with the broader project…