Fast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU)

T2Covered by 1 source · first reported by Semiconductor Engineering / SemiWiki / EE Times / EE Journal / Electronics Weekly at 03 Nov, 17:10 UTC

Seoul National University-led researchers published “Resolving the Kay–Dunn limit and the speed–endurance dilemma in ferroelectric Hf0.5Zr0.5O2 for DRAM-class sub-volt capacitors.” Abstract “Ferroelectric hafnium zirconium oxide can increase charge density in scaled capacitors, but its high…

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Sources

• T2Fast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU)Semiconductor Engineering / SemiWiki / EE Times / EE Journal / Electronics Weekly03 Nov, 17:10