Gallium-doped zinc oxide enables 24.92%-efficient HJT solar cell
Researchers have used room-temperature reactive plasma deposition to produce indium-free transparent electrodes for silicon heterojunction solar cells. Optimizing the oxygen content during deposition enabled a conversion efficiency of 24.92%, with silver-coated copper contacts. The post…
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- T2Gallium-doped zinc oxide enables 24.92%-efficient HJT solar cellUtility Dive / pv magazine / Energy-Storage.news