Infineon to put €1.1bn into GaN fab

T2Covered by 1 source · first reported by Semiconductor Engineering / SemiWiki / EE Times / EE Journal / Electronics Weekly at 28 Oct, 06:13 UTC

Infineon intends to build the first high-volume 300mm GaN fab by investing around €1.1 billion in its llVillach site by 2034. The EU is contributing €319 million towards the cost. […] The post Infineon to put €1.1bn into GaN fab appeared first on Electronics Weekly.

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Sources

• T2Infineon to put €1.1bn into GaN fabSemiconductor Engineering / SemiWiki / EE Times / EE Journal / Electronics Weekly28 Oct, 06:13