Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel)

T2Covered by 1 source · first reported by Semiconductor Engineering / SemiWiki / EE Times / EE Journal / Electronics Weekly at 18 Oct, 23:28 UTC

Researchers at the UC Berkeley, Samsung Electronics, and Intel published “Nanoelectromechanically Gated Gain Cell eDRAM.” Abstract Excerpt: “The memory wall and the slowdown of static random access memory (SRAM) scaling have renewed interest in gain-cell embedded dynamic random access memory…

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Sources

• T2Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel)Semiconductor Engineering / SemiWiki / EE Times / EE Journal / Electronics Weekly18 Oct, 23:28