Simulations Pinpoint Leakage Pathway In GAAFETs (Sandia, Luxembourg)

T2Covered by 1 source · first reported by Semiconductor Engineering / SemiWiki / EE Times / EE Journal / Electronics Weekly at 14 Oct, 17:44 UTC

Researchers at Sandia National Laboratories and Luxembourg Institute of Science and Technology published a technical paper titled “Revealing New Leakage Paths in GAAFETs using Predictive First-Principles Simulations.” Abstract Excerpt: “Gate-All-Around Field-Effect Transistors (GAAFETs) are…

hardwarescience

Sources

• T2Simulations Pinpoint Leakage Pathway In GAAFETs (Sandia, Luxembourg)Semiconductor Engineering / SemiWiki / EE Times / EE Journal / Electronics Weekly14 Oct, 17:44