Characterization of HBM Power Consumption (ETH Zurich, NYU)

T2Covered by 1 source · first reported by Semiconductor Engineering / SemiWiki / EE Times / EE Journal / Electronics Weekly at 14 Oct, 15:27 UTC

Researchers at ETH Zürich and New York University published a technical paper titled “Understanding the Power Consumption of Modern High Bandwidth Memory: Experimental Analysis and Modeling Using Real HBM2 DRAM Chips.” Abstract Excerpt: “We perform the first comprehensive experimental…

hardwarescience

Sources

• T2Characterization of HBM Power Consumption (ETH Zurich, NYU)Semiconductor Engineering / SemiWiki / EE Times / EE Journal / Electronics Weekly14 Oct, 15:27