Carbon-Dot Interface Enables Ultrathin High-κ Dielectrics on 2D Semiconductors (UIUC, NETL, Argonne, Monash)

T2Covered by 1 source · first reported by Semiconductor Engineering / SemiWiki / EE Times / EE Journal / Electronics Weekly at 12 Oct, 22:55 UTC

Researchers at the University of Illinois Urbana-Champaign, National Energy Technology Laboratory, Argonne National Laboratory, and Monash University published a technical paper titled “Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial…

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Sources

• T2Carbon-Dot Interface Enables Ultrathin High-κ Dielectrics on 2D Semiconductors (UIUC, NETL, Argonne, Monash)Semiconductor Engineering / SemiWiki / EE Times / EE Journal / Electronics Weekly12 Oct, 22:55