A 7-eV bandgap semiconductor based on silicon-doped α-(AlxGa1−x)2O3

T1Covered by 1 source · first reported by Nature / Science / Nature Biotechnology at 07 Oct, 00:00 UTC

Nature, Published online: 07 October 2026; doi:10.1038/s41586-026-11085-3 Suboxide molecular-beam epitaxy is used to grow silicon-doped α-(AlxGa1−x)2O3 films with bandgaps exceeding 7.0 eV, enabling the fabrication of a Schottky diode and a field-effect transistor with colossal-bandgap channels.

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• T1A 7-eV bandgap semiconductor based on silicon-doped α-(AlxGa1−x)2O3Nature / Science / Nature Biotechnology07 Oct, 00:00