Samsung reshuffles DRAM roadmap, prioritizing B1b hybrid bonding for D0a, HBM5

T2Covered by 1 source · first reported by JP/KR/TW: Korea Herald / Taipei Times / DigiTimes at 29 Sept, 08:19 UTC

Samsung Electronics is reshaping its next-generation dynamic random-access memory (DRAM) roadmap, elevating its B1b wafer-to-wafer (W2W) hybrid bonding technology from a project-specific development to the core technology behind D0a, its first sub-10nm DRAM generation. Industry observers believe…

hardware

Sources

• T2Samsung reshuffles DRAM roadmap, prioritizing B1b hybrid bonding for D0a, HBM5JP/KR/TW: Korea Herald / Taipei Times / DigiTimes29 Sept, 08:19